ech8657 no. a1710-1/7 features ? 4v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 35 v gate-to-source voltage v gss 20 v drain current (dc) i d 4.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 30 a allowable power dissipation p d when mounted on ceramic substrate (1200mm 2 0.8mm) 1unit 1.3 w total dissipation p t when mounted on ceramic substrate (1200mm 2 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7011a-001 ordering number : ENA1710B 61312 tkim/d2210 tkim/42810pe tkim tc-00002338 ech8657 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network product & package information ? package : ech8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection tl tc lot no. 8765 1234 sanyo semiconductors data sheet 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 to p view bo t t o m view ech8657-tl-h
ech8657 no. a1710-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 35 v zero-gate voltage drain current i dss v ds =35v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d =2a 1.66 s static drain-to-source on-state resistance r ds (on)1 i d =2a, v gs =10v 45 59 m r ds (on)2 i d =1a, v gs =4.5v 85 119 m r ds (on)3 i d =1a, v gs =4v 110 155 m input capacitance ciss v ds =20v, f=1mhz 230 pf output capacitance coss 37 pf reverse transfer capacitance crss 25 pf turn-on delay time t d (on) see speci ed test circuit. 6ns rise time t r 11 ns turn-off delay time t d (off) 17 ns fall time t f 9ns total gate charge qg v ds =20v, v gs =10v, i d =4.5a 4.6 nc gate-to-source charge qgs 1.0 nc gate-to-drain ?miller? charge qgd 1.0 nc diode forward voltage v sd i s =4.5a, v gs =0v 0.85 1.2 v switching time test circuit ordering information device package shipping memo ech8657-tl-h ech8 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =2a r l =10 v dd =20v v out ech8657 v in 10v 0v v in
ech8657 no. a1710-3/7 i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 1.5 0.5 2.5 3.0 1.0 2.0 3.5 4.0 0 0 it14210 it14211 0.1 0.4 0.2 0.6 0.5 0.3 0.8 0.7 0.9 1.0 0 1 2 3 4 5 1 4 2 5 3 6 v ds =10v --25 c ta=75 c v gs =3.0v 3. 5v 4.0v 25 c 4.5v 15.0v 6.0v 10.0v ambient temperature, ta -- c r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf 0.2 0.4 0.6 1.2 1.0 0.8 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 7 5 3 --60 --40 --20 0 20 40 60 80 100 120 140 160 0 40 80 160 200 120 v gs =4.0v, i d =1a v gs =10. 0v, i d =2a v gs =4.5v, i d =1a it14213 it14214 it14215 ta= --25 c 75 c 25 c v ds =10v --25 c 25 c ta=75 c v gs =0v 10 1.0 7 5 3 7 5 3 2 2 0.1 2 1.0 357 it14216 v dd =15v v gs =10v t d (off) t r t f 10 23 57 t d (on) 0.1 2 2 5 3 1.0 7 5 3 2 0.01 0.1 2 57 32 1.0 57 357 3 0 100 10 7 5 3 5 3 2 2 30 5152025 10 it14217 f=1mhz ciss coss crss gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m r ds (on) -- v gs it16223 ta=25 c i d =1a 2a 0 2 10 12 8 6 41416 0 40 80 160 120 240 200
ech8657 no. a1710-4/7 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a 012345 0 1 2 3 4 5 6 7 8 10 9 it14218 v ds =10v i d =4.5a it15504 2 2 3 5 7 0.1 2 3 5 7 1.0 0.01 0.1 2 1.0 57 32 10 57 33 257 operation in this area is limited by r ds (on). 100ms dc operation (ta=25 c) 10ms 2 3 5 7 3 5 7 10 i dp =30a ( pw 10 s) i d =4.5a 100 s 1ms ta=25 c single pulse when mounted on ceramic substrate (1200mm 2 0.8mm) 1unit it15505 p d -- ta allowable power dissipation, p d -- w 0 0 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 1.5 1.3 1unit total dissipation when mounted on ceramic substrate (1200mm 2 0.8mm) ambient temperature, ta -- c
ech8657 no. a1710-5/7 embossed taping speci cation ech8657-tl-h
ech8657 no. a1710-6/7 outline drawing land pattern example ech8657-tl-h mass (g) unit 0.02 * for reference mm unit: mm 0.4 0.6 2.8 0.65
ech8657 no. a1710-7/7 ps this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. note on usage : since the ech8657 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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